M28W640CB80N1T中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

SUMMARY DESCRIPTION

The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I/O pin down to 1.65V. An optional 12V VPPpower supply is provided to speed up customer programming.

FEATURES SUMMARY

■SUPPLY VOLTAGE

–VDD= 2.7V to 3.6V Core Power Supply

–VDDQ= 1.65V to 3.3V for Input/Output

–VPP= 12V for fast Program (optional)

■ACCESS TIME

– 3.0V to 3.6V: 80ns

– 2.7V to 3.6V: 90ns

■PROGRAMMING TIME:

– 10μs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■COMMON FLASH INTERFACE

■MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■BLOCK LOCKING

– All blocks locked at Power Up

– Any combination of blocks can be locked

–WPfor Block Lock-Down

■SECURITY

– 128 bit user Programmable OTP cells

– 64 bit unique device identifier

– One Parameter Block Permanently Lockable

■AUTOMATIC STAND-BY MODE

■PROGRAM and ERASE SUSPEND

■100,000 PROGRAM/ERASE CYCLES per BLOCK

■ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W640CT: 8848h

– Bottom Device Code, M28W640CB: 8849h