M29W040-200NZ6R中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

DESCRIPTION

The M29W040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte.

The interface is directly compatible with most microprocessors. PLCC32, TSOP32(8 x 20mm)and TSOP32 (8 x 14mm) packages are available. Both normal and reverse pin outs are available for the TSOP32 (8 x 20mm) package.

■ M29W040 is replaced by the M29W040B

■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ FAST ACCESS TIME: 100ns

■ BYTE PROGRAMMING TIME: 12μs typical

■ ERASE TIME

– Block: 1.5 sec typical

– Chip: 2.5 sec typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

– Data Polling and Toggle bits Protocol for P/E.C. Status

■ MEMORY ERASE in BLOCKS

– 8 Uniform Blocks of 64 KBytes each

– Block Protection

– Multiblock Erase

■ ERASE SUSPEND and RESUME MODES

■ LOW POWER CONSUMPTION

– Read mode: 8mA typical (at 12MHz)

– Stand-by mode: 20μA typical

– Automatic Stand-by mode

■ POWER DOWN SOFTWARE COMMAND

– Power-down mode: 1μA typical

■ 100,000PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E3h