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M29W800DB70ZE6F

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W800DB70ZE6F

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYX

numonyx

M29W800DB70ZE6F

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W800DB70ZE6F TR

Package:48-TFBGA;包裝:托盤 類別:集成電路(IC) 存儲器 描述:IC FLASH 8MBIT PARALLEL 48TFBGA

ELPIDAElpida Memory

美光科技美光科技股份有限公司

M29W800DB70ZE6E

8Mbit(1Mbx8or512Kbx16,BootBlock)3VSupplyFlashMemory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W800DB70ZE6E

8-Mbit(1Mbitx8or512Kbitsx16,bootblock)3Vsupplyflashmemory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYX

numonyx

M29W800DB70ZE6E

8Mbit(1Mbx8or512Kbx16,BootBlock)3VSupplyFlashMemory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W800DB70ZE6T

8Mbit(1Mbx8or512Kbx16,BootBlock)3VSupplyFlashMemory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W800DB70ZE6T

8Mbit(1Mbx8or512Kbx16,BootBlock)3VSupplyFlashMemory

TheM29W800Disa8Mbit(1Mbx8or512Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply. Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMor

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29W800DB70ZE6T

8-Mbit(1Mbitx8or512Kbitsx16,bootblock)3Vsupplyflashmemory

Description TheM29W800Disa8-Mbit(1Mbitx8or512Kbitsx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsreadmodewhereitcanbereadinthesame

NUMONYX

numonyx

詳細參數(shù)

  • 型號:

    M29W800DB70ZE6F

  • 功能描述:

    閃存 STD FLASH 8 MEG

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 數(shù)據(jù)總線寬度:

    1 bit

  • 存儲類型:

    Flash

  • 存儲容量:

    2 MB

  • 結構:

    256 K x 8

  • 接口類型:

    SPI

  • 電源電壓-最大:

    3.6 V

  • 電源電壓-最?。?/span>

    2.3 V

  • 最大工作電流:

    15 mA

  • 工作溫度:

    - 40 C to + 85 C

  • 安裝風格:

    SMD/SMT

  • 封裝:

    Reel

供應商型號品牌批號封裝庫存備注價格
MICRON
22+
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7263
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2016+
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22+
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3000
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2021+
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9000
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2023+
SMD
3794
原裝現(xiàn)貨熱賣,安羅世紀電子只做原裝
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24+
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23000
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
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MICRON
2024+
N/A
70000
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Micron
17+
6200
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ST
08+
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400
原裝現(xiàn)貨海量庫存歡迎咨詢
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MICRON
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
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更多M29W800DB70ZE6F供應商 更新時間2025-5-21 9:03:00