M29W800DT45ZE1E中文資料NUMONYX數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

The M29W800D is a 8-Mbit (1 Mbit x 8 or 512 Kbits x 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM.

Features

■ Supply voltage

– VCC = 2.7 V to 3.6 V for program, erase and read

■ Access times: 45, 70, 90 ns

■ Programming time

– 10 μs per byte/word typical

■ 19 memory blocks

– 1 boot block (top or bottom location)

– 2 parameter and 16 main blocks

■ Program/erase controller

– Embedded byte/word program algorithms

■ Erase suspend and resume modes

– Read and program another block during erase suspend

■ Unlock bypass program command

– Faster production/batch programming

■ Temporary block unprotection mode

■ Common flash interface

– 64-bit security code

■ Low power consumption

– Standby and automatic standby

■ 100,000 program/erase cycles per block

■ Electronic signature

– Manufacturer code: 0020h

– Top device code M29W800DT: 22D7h

– Bottom device code M29W800DB: 225Bh