M34C02-WMN6T集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

M34C02-WMN6T屬于集成電路（IC）的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M34C02-WMN6T存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

The M34C02 is a 2 Kbit serial EEPROM memory able to lock permanently the data in its first half (from location 00h to 7Fh). This facility has been designed specifically for use in DRAM DIMMs (dual interline memory modules) with Serial Presence Detect. All the information concerning the DRAM module configuration (such as its access speed, its size, its organization) can be kept write protected in the first half of the memory.

FEATURES SUMMARY

■ Software Data Protection for lower 128 bytes

■ Two Wire I2C Serial Interface

■ 100kHz and 400kHz Transfer Rates

■ Single Supply Voltage:

– 2.5 to 5.5V up to 400kHz for M34C02-W

– 2.2 to 5.5V up to 400kHz for M34C02-L

– 1.8 to 5.5V up to 100kHz for M34C02-R

– 1.7 to 3.6V up to 100kHz for M34C02-F

■ BYTE and PAGE WRITE (up to 16 bytes)

■ RANDOM and SEQUENTIAL READ Modes

■ Self-Timed Programming Cycle

■ Automatic Address Incrementing

■ Enhanced ESD/Latch-Up Protection

■ More than 1 Million Erase/Write Cycles

■ More than 40 Year Data Retention