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M36P0R9070E0ZACE

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

M36P0R9070E0ZACE

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M36P0R9070E0ZACE

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M36P0R9070E0

512Mbit(x16,MultipleBank,Multi-Level,Burst)FlashMemory128Mbit(Burst)PSRAM,1.8VSupply,Multi-ChipPackage

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M36P0R9070E0

512Mbit(x16,MultipleBank,Multi-Level,Burst)Flashmemory128Mbit(Burst)PSRAM,1.8Vsupply,Multi-ChipPackage

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

M36P0R9070E0

512Mbit(x16,MultipleBank,Multi-Level,Burst)Flashmemory128Mbit(Burst)PSRAM,1.8Vsupply,Multi-ChipPackage

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M36P0R9070E0ZAC

512Mbit(x16,MultipleBank,Multi-Level,Burst)Flashmemory128Mbit(Burst)PSRAM,1.8Vsupply,Multi-ChipPackage

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

M36P0R9070E0ZAC

512Mbit(x16,MultipleBank,Multi-Level,Burst)Flashmemory128Mbit(Burst)PSRAM,1.8Vsupply,Multi-ChipPackage

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M36P0R9070E0ZAC

512Mbit(x16,MultipleBank,Multi-Level,Burst)FlashMemory128Mbit(Burst)PSRAM,1.8VSupply,Multi-ChipPackage

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M36P0R9070E0ZACF

512Mbit(x16,MultipleBank,Multi-Level,Burst)Flashmemory128Mbit(Burst)PSRAM,1.8Vsupply,Multi-ChipPackage

Summarydescription TheM36P0R9070E0combinestwomemorydevicesinoneMulti-ChipPackage: ●512-MbitMultipleBankFlashmemory(theM58PR512J). ●128MbitPSRAM(theM69KB128AB). Thepurposeofthisdocumentistodescribehowthetwomemorycomponentsoperatewithrespecttoeachother.It

NUMONYX

numonyx

詳細參數(shù)

  • 型號：

    M36P0R9070E0ZACE

  • 制造商：

    Micron Technology Inc

  • 功能描述：

    WIRELESS - Trays

供應(yīng)商型號品牌批號封裝庫存備注價格
Micron
1844+
TFBGA107
6528
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
MICRON/美光
23+
BGA
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
ST
07+
BGA
58
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
ST/意法
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
22+
BGA
3000
原裝正品,支持實單
 詢價
ST
23+
BGA
16900
正規(guī)渠道,只有原裝!
 詢價
ST
BGA
68500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
ST/意法
23+
BGA
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
ST/意法
24+
NA/
3840
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
ST
24+
BGA
200000
原裝進口正口,支持樣品
 詢價
更多M36P0R9070E0ZACE供應(yīng)商 更新時間2025-5-21 18:00:00

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