M36W832TEZA中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

SUMMARY DESCRIPTION

The M36W832TE is a low voltage Multiple Memory Product which combines two memory devices; a 32 Mbit boot block Flash memory and an 8 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDDF = 2.7V to 3.3V

– VDDS = VDDQF = 2.7V to 3.3V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIMES: 70ns and 85ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W832TE: 88BAh

– Bottom Device Code, M36W832BE: 88BBh

FLASH MEMORY

■ 32 Mbit (2Mb x16) BOOT BLOCK

– 8 x 4 KWord Parameter Blocks (Top or Bottom Location)

■ PROGRAMMING TIME

– 10μs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ AUTOMATIC STANDBY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ COMMON FLASH INTERFACE

■ SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device identifier

SRAM

■ 8 Mbit (512Kb x 16)

■ ACCESS TIME: 70ns

■ LOW VDDS DATA RETENTION: 1.5V

■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS