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M470T2953CZ0-CC

DDR2 Unbuffered SODIMM

Features ?Performancerange ?JEDECstandard1.8V±0.1VPowerSupply ?VDDQ=1.8V±0.1V ?200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin ?4Banks ?PostedCAS ?ProgrammableCASLatency:3,4,5 ?ProgrammableAd

SamsungSamsung semiconductor

三星三星半導(dǎo)體

M470T2953CZ0-CCC

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

Features ?Performancerange ?JEDECstandard1.8V±0.1VPowerSupply ?VDDQ=1.8V±0.1V ?200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin ?4Banks ?PostedCAS ?ProgrammableCASLatency:3,4,5 ?ProgrammableAd

SamsungSamsung semiconductor

三星三星半導(dǎo)體

M470T2953CZ0-CD5

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

Features ?Performancerange ?JEDECstandard1.8V±0.1VPowerSupply ?VDDQ=1.8V±0.1V ?200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin ?4Banks ?PostedCAS ?ProgrammableCASLatency:3,4,5 ?ProgrammableAd

SamsungSamsung semiconductor

三星三星半導(dǎo)體

M470T2953CZ0-CD6

DDR2 Unbuffered SODIMM

Features ?Performancerange ?JEDECstandard1.8V±0.1VPowerSupply ?VDDQ=1.8V±0.1V ?200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin ?4Banks ?PostedCAS ?ProgrammableCASLatency:3,4,5 ?ProgrammableAd

SamsungSamsung semiconductor

三星三星半導(dǎo)體

M470T2953CZ0-CE6

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

Features ?Performancerange ?JEDECstandard1.8V±0.1VPowerSupply ?VDDQ=1.8V±0.1V ?200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin ?4Banks ?PostedCAS ?ProgrammableCASLatency:3,4,5 ?ProgrammableAd

SamsungSamsung semiconductor

三星三星半導(dǎo)體

M470T2953CZ0-CE7

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

Features ?Performancerange ?JEDECstandard1.8V±0.1VPowerSupply ?VDDQ=1.8V±0.1V ?200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin ?4Banks ?PostedCAS ?ProgrammableCASLatency:3,4,5 ?ProgrammableAd

SamsungSamsung semiconductor

三星三星半導(dǎo)體

M470T2953CZ0-CLCC

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

Features ?Performancerange ?JEDECstandard1.8V±0.1VPowerSupply ?VDDQ=1.8V±0.1V ?200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin ?4Banks ?PostedCAS ?ProgrammableCASLatency:3,4,5 ?ProgrammableAd

SamsungSamsung semiconductor

三星三星半導(dǎo)體

M470T2953CZ0-CLD5

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

Features ?Performancerange ?JEDECstandard1.8V±0.1VPowerSupply ?VDDQ=1.8V±0.1V ?200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin ?4Banks ?PostedCAS ?ProgrammableCASLatency:3,4,5 ?ProgrammableAd

SamsungSamsung semiconductor

三星三星半導(dǎo)體

M470T2953CZ0-CLE6

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

Features ?Performancerange ?JEDECstandard1.8V±0.1VPowerSupply ?VDDQ=1.8V±0.1V ?200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin ?4Banks ?PostedCAS ?ProgrammableCASLatency:3,4,5 ?ProgrammableAd

SamsungSamsung semiconductor

三星三星半導(dǎo)體

M470T2953CZ0-CLE7

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

Features ?Performancerange ?JEDECstandard1.8V±0.1VPowerSupply ?VDDQ=1.8V±0.1V ?200MHzfCKfor400Mb/sec/pin,267MHzfCKfor533Mb/sec/pin,333MHzfCKfor667Mb/sec/pin,400MHzfCKfor800Mb/sec/pin ?4Banks ?PostedCAS ?ProgrammableCASLatency:3,4,5 ?ProgrammableAd

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    M47

  • 制造商:

    Alpha Wire

  • 功能描述:

    CBL 15COND 18AWG SLT 1000'

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