M50FW080NB5P中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Summary description

The M50FW080 is an 8 Mbit (1Mbit x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times.

Feature summary

■ Supply voltage

– VCC = 3 V to 3.6 V for Program, Erase and Read operations

– VPP = 12 V for fast program and fast erase (optional)

■ Two interfaces

– Firmware Hub (FWH) Interface for embedded operation with PC Chipsets

– Address/Address Multiplexed (A/A Mux) Interface for programming equipment compatibility

■ Firmware hub (FWH) hardware interface mode

– 5 signal communication interface supporting Read and Write operations

– Hardware Write Protect pins for block protection

– Register-based Read and Write Protection

– 5 additional general-purpose inputs for platform design flexibility

– Synchronized with 33 MHz PCI clock

■ Programming time

– 10 μs typical

– Quadruple Byte Programming option

■ 16 uniform 64 Kbyte memory blocks

■ Program/Erase Controller

– Embedded Byte Program and Block/Chip Erase algorithms

– Status Register bits

■ Program and Erase Suspend

– Read other Blocks during Program/Erase Suspend

– Program other Blocks during Erase Suspend

■ For use in PC BIOS applications

■ Electronic signature

– Manufacturer code: 20h

– Device Code: 2Dh

■ Packages

– ECOPACK? (RoHS compliant)