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PBSS5350D

PNPtransistor

DESCRIPTION PNPlowVCEsattransistorinaSC-74plasticpackage. NPNcomplement:PBSS4350D. FEATURES ?Highcurrentcapabilities ?LowVCEsat. APPLICATIONS ?Heavydutybatterypoweredequipment(Automotive,TelecomandAudio/Video)suchasmotorandlampdrivers ?VCEsatcriticalapplica

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350D

50VlowVCEsatPNPtransistor

Generaldescription 150WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom2500MHzto2700MHz. Featuresandbenefits ■Excellentruggedness ■Highefficiency ■LowRthprovidingexcellentthermalstability ■Designedforbroadbandoperation(2500MHzto2700MHz) ■

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS5350D

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350D

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcurrentcapability ?Highefficiencyduetolessheatgenera

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350D-Q

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcurrentcapability ?Highefficiencyduetolessheatgene

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350PAS

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350PAS-Q

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS-Q 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersatura

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350S

Highpowerdissipation(830mW)

DESCRIPTION PNPlowVCEsattransistorinaSOT54plasticpackage. NPNcomplement:PBSS4350S. FEATURES ?Highpowerdissipation(830mW) ?Ultralowcollector-emittersaturationvoltage ?3Acontinuouscurrent ?Highcurrentswitching ?Improveddevicereliabilityduetoreducedheat g

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350SS

50V,2.7APNP/PNPlowVCEsat(BISS)transistor

Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS5350SS

50V,2.7ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

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Alpha
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NA
6878
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22+
UDFN2x2
20000
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BITECH
23+
NA
19960
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OKI
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DIP28L
87
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DIP28L
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DIP28L
3000
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OKI
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DIP-28
390
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2447
DIP28
100500
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3200
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DIP28L
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