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M5M5256DP-70LL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M5256DP-70LL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M5256DP-70LL-W

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M5256DP-70XL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M5256DP-70XL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M5256DP-70XL-W

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

詳細(xì)參數(shù)

  • 型號：

    M5M5256DP-70LL

  • 制造商：

    Mitsubishi Electric

  • 功能描述：

    Static RAM, 32Kx8, 28 Pin, Plastic, DIP

供應(yīng)商型號品牌批號封裝庫存備注價格
MIT
20+
DIP
2860
原廠原裝正品價格優(yōu)惠公司現(xiàn)貨歡迎查詢
 詢價
MITSUBISH
24+
DIP
4000
原裝原廠代理 可免費(fèi)送樣品
 詢價
MITSUMI
2024+
DIP28
32560
原裝優(yōu)勢絕對有貨
 詢價
MIT
05+
原廠原裝
665
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價
24+
DIP28
3000
公司存貨
 詢價
NMIT
00+
DIP28
3215
全新原裝進(jìn)口自己庫存優(yōu)勢
 詢價
MIT
23+
DIP/28
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
 詢價
MITSUBISHI
2016+
DIP28P
6523
只做原裝正品現(xiàn)貨!或訂貨!
 詢價
MITSUBI
2020+
DIP
3500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
MITSUBISHI
24+
DIP-28
4650
詢價
更多M5M5256DP-70LL供應(yīng)商 更新時間2025-2-6 14:40:00

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