MAPL-000822-002PP

LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V

Designedforbroadbandcommercialapplicationsupto2.2GHz ?Highgain,highefficiencyandhighlinearity ?Easeofdesignforgainandinsertionphaseflatness ?Excellentthermalstability ?W-CDMAperformanceat2.17GHz,28Vdc Averageoutputpower:28dBm@-39dBcACPR Gain:14.5

MAPL-000978-0075LF

LDMOS Pulsed Power Transistor 75W, 978 MHz, 400關s Pulse, 1 Duty

Features ?GoldLDMOSmicrowavepowertransistor ?Commonsourceconfiguration ?BroadbandClassABoperation ?RoHSCompliant ?AvionicsapplicationsspecificallydesignedforInternalinputandoutputimpedancematching. ?IntegratedESDProtection ?RoHSCompliant

MAPL-000978-0075LN

LDMOS Pulsed Power Transistor 75W, 978 MHz, 400關s Pulse, 1 Duty

Features ?GoldLDMOSmicrowavepowertransistor ?Commonsourceconfiguration ?BroadbandClassABoperation ?RoHSCompliant ?AvionicsapplicationsspecificallydesignedforInternalinputandoutputimpedancematching. ?IntegratedESDProtection ?RoHSCompliant

MAPLST0810-030CF

RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V

Features ■Designedfor865to960MHzBroadband CommercialandBaseStation Applications. ■TypicalCWRFPerformanceat960MHz, 26VDC: ■POUT:30W(P1dB) ■Gain:18dB ■Efficiency:50 ■Ruggedness:10:1VSWR@30WCW, 26V,925MHz ■HighGain,HighEfficie

MAPLST0810-045CF

RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V

Features ■Designedfor865to960MHzBroadband CommercialandBaseStation Applications. ■TypicalCWRFPerformanceat960MHz, 26VDC: ■POUT:45W(P1dB) ■Gain:17.5dB ■Efficiency:50 ■Ruggedness:10:1VSWR@45WCW, 26V,900MHz ■HighGain,HighEffic

MAPLST0810-090CF

RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V

Features ■Designedfor865to960MHzBroadband CommercialandBaseStation Applications. ■TypicalCWRFPerformanceat960MHz, 26VDC: ■POUT:90W(P1dB) ■Gain:18dB ■Efficiency:50 ■Ruggedness:10:1VSWR@90WCW, 26V,900MHz ■HighGain,HighEfficiencyandHigh L

MAPLST0822-002PP

RF Power Field Effect Transistor LDMOS, 800-2200 MHz, 2W, 28V

Features ■Designedforbroadbandcommercial applicationsupto2.2GHz ■HighGain,HighEfficiencyandHigh Linearity ■EaseofDesignforGainandInsertionPhase Flatness ■ExcellentThermalStability ■W-CDMAPerformanceat2.17GHz,28Vdc ■AverageOutputPower:28dBm@-3

MAPLST1617-030CF

RF Power Field Effect Transistor LDMOS, 1600 - 1700 MHz, 30W, 28V

Features DesignedforINMARSATapplicationsinthe1620-1670MHzfrequencyband. ■TypicalTwoTonePerformance (IMD=-30dBc): ■AverageOutputPower:15W ■Gain:14dB(typ.) ■Efficiency:38(typ.) ■10:1VSWRRuggednessat30W,28V,1670MHz)

MAPLST1617-030CF

LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V

DesignedforINMARSATapplicationsinthe1620-1670MHzfrequencyband. ??????? ?Typicaltwotoneperformance(IMD=-30dBc): Averageoutputpower:15W Gain:14dB(typ.) Efficiency:38(typ.) ?10:1VSWRruggednessat30W,28V,1670MHz)

MAPLST1820-030CF

RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 30W, 26V

Features Designedforbasestationapplicationsinthe1805-1880MHzor1930-1990MHzFrequencyBand.SuitableforGSM,EDGE,TDMA,CDMA,andmulti-carrieramplifierapplications ■30WCWOutputPoweratP1dB ■13dBGainatP1dB ■45DrainEfficiencyatP1dB ■10:1VSWRRuggedness(CW@30W,