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MAT01

Matched Monolithic Dual Transistor

GENERALDESCRIPTION TheMAT01isamonolithicdualNPNtransistor.Anexclusivesiliconnitridetriplepassivationprocessprovidesexcellentstabilityofcriticalparametersoverbothtemperatureandtime.Matchingcharacteristicsincludeoffsetvoltageof40μV,temperaturedriftof0.15μV/°

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

MAT01

Matched Monolithic Dual Transistor

GENERALDESCRIPTION TheMAT01isamonolithicdualNPNtransistor.Anexclusivesiliconnitridetriplepassivationprocessprovidesexcellentstabilityofcriticalparametersoverbothtemperatureandtime.Matchingcharacteristicsincludeoffsetvoltageof40μV,temperaturedriftof0.15μV/°

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

MAT01

Matched Monolithic Dual Transistor

FEATURES LowVOS(VBEmatch):40μVtypical,100μVmaximum LowTCVOS:0.5μV/°Cmaximum HighhFE:500minimum ExcellenthFElinearityfrom10nAto10mA Lownoisevoltage:0.23μVp-pfrom0.1Hzto10Hz Highbreakdown:45Vmin APPLICATIONS Weighscales Lownoise,opamp,frontend C

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

MAT01_V01

Matched Monolithic Dual Transistor

FEATURES LowVOS(VBEmatch):40μVtypical,100μVmaximum LowTCVOS:0.5μV/°Cmaximum HighhFE:500minimum ExcellenthFElinearityfrom10nAto10mA Lownoisevoltage:0.23μVp-pfrom0.1Hzto10Hz Highbreakdown:45Vmin APPLICATIONS Weighscales Lownoise,opamp,frontend C

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

MAT01AH

Matched Monolithic Dual Transistor

GENERALDESCRIPTION TheMAT01isamonolithicdualNPNtransistor.Anexclusivesiliconnitridetriplepassivationprocessprovidesexcellentstabilityofcriticalparametersoverbothtemperatureandtime.Matchingcharacteristicsincludeoffsetvoltageof40μV,temperaturedriftof0.15μV/°

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

MAT01AH

Matched Monolithic Dual Transistor

FEATURES LowVOS(VBEmatch):40μVtypical,100μVmaximum LowTCVOS:0.5μV/°Cmaximum HighhFE:500minimum ExcellenthFElinearityfrom10nAto10mA Lownoisevoltage:0.23μVp-pfrom0.1Hzto10Hz Highbreakdown:45Vmin APPLICATIONS Weighscales Lownoise,opamp,frontend C

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

MAT01AHZ

Matched Monolithic Dual Transistor

FEATURES LowVOS(VBEmatch):40μVtypical,100μVmaximum LowTCVOS:0.5μV/°Cmaximum HighhFE:500minimum ExcellenthFElinearityfrom10nAto10mA Lownoisevoltage:0.23μVp-pfrom0.1Hzto10Hz Highbreakdown:45Vmin APPLICATIONS Weighscales Lownoise,opamp,frontend C

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

MAT01GH

Matched Monolithic Dual Transistor

GENERALDESCRIPTION TheMAT01isamonolithicdualNPNtransistor.Anexclusivesiliconnitridetriplepassivationprocessprovidesexcellentstabilityofcriticalparametersoverbothtemperatureandtime.Matchingcharacteristicsincludeoffsetvoltageof40μV,temperaturedriftof0.15μV/°

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

MAT01GH

Matched Monolithic Dual Transistor

FEATURES LowVOS(VBEmatch):40μVtypical,100μVmaximum LowTCVOS:0.5μV/°Cmaximum HighhFE:500minimum ExcellenthFElinearityfrom10nAto10mA Lownoisevoltage:0.23μVp-pfrom0.1Hzto10Hz Highbreakdown:45Vmin APPLICATIONS Weighscales Lownoise,opamp,frontend C

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

MAT01GHZ

Matched Monolithic Dual Transistor

GENERALDESCRIPTION TheMAT01isamonolithicdualNPNtransistor.Anexclusivesiliconnitridetriplepassivationprocessprovidesexcellentstabilityofcriticalparametersoverbothtemperatureandtime.Matchingcharacteristicsincludeoffsetvoltageof40μV,temperaturedriftof0.15μV/°

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MAT01

  • 制造商：

    AD

  • 制造商全稱(chēng)：

    Analog Devices

  • 功能描述：

    Matched Monolithic Dual Transistor

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1000
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更多MAT01供應(yīng)商 更新時(shí)間2025-4-2 18:15:00

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