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MJ802

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

MJ802G

High??owerNPNSiliconTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJ802G

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=90V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):0.8V(Max)@IC=7.5A APPLICATIONS ·Designedforuseasanoutputdeviceincomplementary audioamplifiersto100-Wattsmusicpowerperchannel.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE802

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ??????? ?HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC ?ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJE802

SILICONNPNPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJE802

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE802

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE802

SILICONNPNPOWERDARLINGTONTRANSISTOR

■STMicroelectronicsPREFERRED SALESTYPE ■NPNDARLINGTON APPLICATIONS ■GENERALPURPOSESWITCHING DESCRIPTION TheMJE802isasiliconEpitaxial-BaseNPN transistorinmonolithicDarlingtonconfiguration, mountedinJedecSOT-32plasticpackage.Itis intendedforuseinmediumpower

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJE802

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

SAVANTIC

Savantic, Inc.

MJE802

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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MAXIM
23+
NA
25060
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MAXIM
22+
PDIP8
8200
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MAXIM
2023+
PDIP
50000
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MAXIM
13+
PDIP
3758
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MaximIntegrated
24+
8-PDIP
66800
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Maxim Integrated
24+
8-PDIP
65200
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Maxim
24+
8-DIP
28500
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567
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MAXIM
20+
DIP-8
50
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Maxim
22+
8PDIP
9000
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更多MAX802SC/D供應(yīng)商 更新時(shí)間2025-5-6 9:00:00

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