MB84VD2008中文資料富士通數(shù)據(jù)手冊(cè)PDF規(guī)格書

■ FEATURES

? Power supply voltage of 2.7 to 3.6 V

? High performance

100 ns maximum access time

? Operating Temperature

–20 to +85°C

— FLASH MEMORY

? Simultaneous operations Read-while Erase or Read-while-Program

? Minimum 100,000 write/erase cycles

? Sector erase architecture

Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

? Boot Code Sector Architecture

MB84VD2008: Top sector

MB84VD2009: Bottom sector

? Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

? Embedded ProgramTM Algorithms

Automatically writes and verifies data at specified address

? Data Polling and Toggle Bit feature for detection of program or erase cycle completion

? Ready-Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

? Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode.

? Low VCC write inhibit ≤ 2.5 V

? Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

? Please refer to MBM29DL800TA/BA data sheet in detailed function

— SRAM

? Power dissipation

Operating : 50 mA max.

Standby : 50 μA max.

? Data retention supply voltage: 2.0 V to 3.6 V