首頁 >MBW100T120PHF>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
MBW100T120PHF | 1200V Field stop High Ruggedness version IGBT Data sheet GeneralDescriptions ThisIGBTisproducedusingadvancedMagnachip’sField StopTrenchIGBTTechnology,whichprovideslowVCE(SAT), highswitchingperformanceandexcellentquality. Features ?1200VTrench+Fieldstoptechnology ?Lowswitchinglosses ?Positivetemperaturecoefficient | MGCHIP MagnaChip Semiconductor. | MGCHIP | |
IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),SCR,PowerTO247-3L,1200V,1.4V,100A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTP2473?leadpackage,FGY100T120RWDoffersthe optimumperformancewithlowconductionlossesandgoodswitching controllabilityforahighefficiencyoperationinvariousapplications likemotorcontr | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),SCR,PowerTO247-3L,1200V,1.4V,100A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473?leadpackage,FGY100T120RWDoffersthe optimumperformancewithlowconductionlossesandgoodswitching controllabilityforahighefficiencyoperationinvariousapplications likemotorcontr | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT DESCRIPTION ·HighCurrentCapability ·SmoothandOptimizedSwitching ·LowSwitchingLoss APPLICATIONS ·EnergyStorageSystem ·BoostandInverterinSolarSystem ·Uninterruptiblepowersupplies(UPS) | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IGBT-Power,Co-PAKN-Channel,FieldStopVII(FS7),Non-SCR,TO247-3L1200V,1.7V,100A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473?leadpackage,FGY100T120SWDoffersthe optimumperformancewithlowswitchingandconductionlossesfor high?efficiencyoperationsinvariousapplicationslikeSolar,UPS, andESS. Features ? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT-Power,Co-PAKN-Channel,FieldStopVII(FS7),Non-SCR,TO247-3L1200V,1.7V,100A Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2473?leadpackage,FGY100T120SWDoffersthe optimumperformancewithlowswitchingandconductionlossesfor high?efficiencyoperationsinvariousapplicationslikeSolar,UPS, andESS. Features ? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
100V,12AlowleakagecurrentTrenchMEGASchottkybarrierrectifier 1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP15B(SOT1289B)powerandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Lowforwardvoltage ?LowQrrandlowIRM ?Lowleakagecu | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
POW-R-PAK100A/1200V3phaseIGBTAssembly Description: ThePowerexPOW-R-PAKTMisaconfigurableIGBTbasedpowerassemblythatmaybeusedasaconverter,chopper,halforfullbridge,orthreephaseinverterformotorcontrol,powersupply,UPSorotherpowerconversionapplications. Features: ■HighperformanceIGBTinverterbridge | POWEREX Powerex Power Semiconductors | POWEREX | ||
3-PhasePOW-R-PAKIGBTAssembly100Amperes/1200Volts Description: ThePowerexPOW-R-PAK?isaconfigurableIGBTbasedpowerassemblythatmaybeusedasaconverter,chopper,halforfullbridge,orthreephaseinverterformotorcontrol,powersupply,UPSorotherpowerconversionapplications. Features: □HighperformanceIGBTinverterbridge | POWEREX Powerex Power Semiconductors | POWEREX |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Hynix |
23+ |
NA |
12000 |
全新原裝假一賠十 |
詢價 | ||
LAMBDA |
18+ |
DIP |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
LAMBDA |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
MINI |
24+ |
SMD |
3600 |
MINI專營品牌全新原裝正品假一賠十 |
詢價 | ||
TDK/東電化 |
23+ |
POWER |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
24+ |
2200 |
詢價 | |||||
CHINAXYJ |
23+ |
1206 |
9868 |
專做原裝正品,假一罰百! |
詢價 | ||
SUNLORD/順絡(luò) |
23+ |
SOP-8 |
89630 |
當天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
晶利來 |
24+ |
22800 |
原裝現(xiàn)貨 優(yōu)勢出貨 |
詢價 | |||
DOMINANT |
571000 |
詢價 |
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