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NCV8403

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit42V,14A,SingleN??hannel,SOT??23

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCV8403

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCV8403A

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCV8403A

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit42V,14A,SingleN-Channel

NCV8403A/BisathreeterminalprotectedLow-SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain-to-Gateclampingforovervoltageprotection. Thisdeviceoffersprotectionandissuitableforharshautomotive environments. Featu

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCV8403A

Self-ProtectedLowSideDriver

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCV8403A

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit42V,14A,SingleN-Channel

NCV8403A/BisathreeterminalprotectedLow-SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain-to-Gateclampingforovervoltageprotection. Thisdeviceoffersprotectionandissuitableforharshautomotive environments. Feature

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCV8403ADTRKG

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit42V,14A,SingleN-Channel

NCV8403A/BisathreeterminalprotectedLow-SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain-to-Gateclampingforovervoltageprotection. Thisdeviceoffersprotectionandissuitableforharshautomotive environments. Feature

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCV8403ADTRKG

Self-ProtectedLowSideDriver

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NCV8403ADTRKG

N-channelAdvancedModePowerMOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

NCV8403ADTRKG

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit42V,14A,SingleN-Channel

NCV8403A/BisathreeterminalprotectedLow-SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain-to-Gateclampingforovervoltageprotection. Thisdeviceoffersprotectionandissuitableforharshautomotive environments. Featu

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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