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MDFS10N60D

N-ChannelMOSFET600V,10A,0.75(ohm)

MGCHIP

MagnaChip Semiconductor.

MDFS10N60DTH

N-ChannelMOSFET600V,10A,0.75(ohm)

MGCHIP

MagnaChip Semiconductor.

MDFS10N60DTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDP10N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MDP10N60G

N-ChannelMOSFET600V,10A,0.7(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDP10N60GTH

N-ChannelMOSFET600V,10A,0.7(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDP10N60GTH

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?PFCstages ?LCD&PDPTV ?Powersupply ?Sw

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MHF10N60CT

600VSiliconN-ChannelPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

MS10N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSF10N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

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5000
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8560
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9500
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35200
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100500
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更多MDF10N60ZG供應(yīng)商 更新時(shí)間2025-3-20 10:19:00

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