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MEM4X16E43VTW-5規(guī)格書詳情
[MEMPHIS]
GENERAL DESCRIPTION
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 columns on the MEM4X16E43VTW. During READ or WRITE cycles, each location is uniquely addressed via the address bits: 12 row-address bits (A0-A11) and 10 column-address bits (A0-A9) on the MEM4X16E43VTW version. In addition, the byte and word accesses are supported via the two CAS# pins (CASL# and CASH#).
FEATURES
? Single +3.3V ±0.3V power supply
? Industry-standard x16 pinout, timing, functions, and package
? 12 row, 10 column addresses (4)
13 row, 9 column addresses (8)
? High-performance CMOS silicon-gate process
? All inputs, outputs and clocks are LVTTL-compatible
? Extended Data-Out (EDO) PAGE MODE access
? 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms
? Self refresh for low-power data retention
產(chǎn)品屬性
- 型號：
MEM4X16E43VTW-5
- 功能描述：
4 MEG x 16 EDO DRAM
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MEMPHIS |
22+ |
BGA |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
MEMPHIS |
22+ |
TSSOP |
5623 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
MEMPHIS |
2023+ |
TSOP |
3635 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
MXIC |
2020+ |
TSOP |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
HYNIX/海力士 |
23+ |
TSOP-48 |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
MEMPHIS |
2447 |
BGA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
MEMPHIS |
23+ |
TSSOP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
MEMPHIS |
22+ |
BGA |
28120 |
原裝正品現(xiàn)貨 |
詢價 | ||
MEMPHIS |
BGA |
90000 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
MEMPHIS |
24+ |
BGA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 |
