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MRF141

N-CHANNELBROADBANDRFPOWERMOSFET

TheRFMOSFETLine RFPowerField-EffectTransistor N–ChannelEnhancement–ModeMOSFET Designedforbroadbandcommercialandmilitaryapplicationsatfrequenciesto175MHz.Thehighpower,highgainandbroadbandperformanceofthisdevicemakespossiblesolidstatetransmittersforFMbroadcas

MACOM

Tyco Electronics

MRF141

N-CHANNELBROADBANDRFPOWERMOSFET

TheRFMOSFETLine RFPowerField-EffectTransistor N–ChannelEnhancement–ModeMOSFET Designedforbroadbandcommercialandmilitaryapplicationsatfrequenciesto175MHz.Thehighpower,highgainandbroadbandperformanceofthisdevicemakespossiblesolidstatetransmittersforFMbroadcas

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF141

RFPowerFET150W,to175MHz,28V

RFPowerFET150W,to175MHz,28V Designedforbroadbandcommercialandmilitaryapplicationsatfrequenciesto175MHz.Thehighpower,highgainandbroadbandperformanceofthisdeviceisespeciallyusefulforFMbroadcastorTVchannelfrequencybandsolidstatetransmittersandamplifiers.

MA-COM

M/A-COM Technology Solutions, Inc.

MRF141

RFPowerFET150W,to175MHz,28V

MA-COM

M/A-COM Technology Solutions, Inc.

MRF141G

N-CHANNELBROADBANDRFPOWERMOSFET

TheRFMOSFETLine RFPowerField-EffectTransistor N–ChannelEnhancement–ModeMOSFET Designedforbroadbandcommercialandmilitaryapplicationsatfrequenciesto175MHz.Thehighpower,highgainandbroadbandperformanceofthisdevicemakespossiblesolidstatetransmittersforFMbroadcas

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF141G

N-CHANNELBROADBANDRFPOWERMOSFET

TheRFMOSFETLine RFPowerField-EffectTransistor N–ChannelEnhancement–ModeMOSFET Designedforbroadbandcommercialandmilitaryapplicationsatfrequenciesto175MHz.Thehighpower,highgainandbroadbandperformanceofthisdevicemakespossiblesolidstatetransmittersforFMbroadcas

MACOM

Tyco Electronics

MRF141G

RFPowerFET300W,175MHz,28V

RFPowerFET300W,175MHz,28V Designedforbroadbandcommercialandmilitaryapplicationsatfrequenciesto175MHz.Thehighpower,highgainandbroadbandperformanceofthisdeviceisespeciallyusefulforFMbroadcastorTVchannelfrequencybandsolidstatetransmittersandamplifiers. ?G

MA-COM

M/A-COM Technology Solutions, Inc.

MRF141G

RFFIELD-EFFECTPOWERTRANSISTOR

DESCRIPTION: TheASIMRF141GisaDualCommonSourceN-ChannelEnhancement-ModeMOSFETRFPowerTransistor,Designedfor175MHz,300WTransmitterandAmplifierApplications.

ASI

Advanced Semiconductor

MRF141G

RFPowerFET300W,175MHz,28V

MA-COM

M/A-COM Technology Solutions, Inc.

MRF141G

RFPowerField-EffectTransistor

TheRFMOSFETLine RFPowerField-EffectTransistor N–ChannelEnhancement–ModeMOSFET Designedforbroadbandcommercialandmilitaryapplicationsatfrequenciesto175MHz.Thehighpower,highgainandbroadbandperformanceofthisdevicemakespossiblesolidstatetransmittersforFMbroadcas

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

詳細參數(shù)

  • 型號：

    MF-141

  • 制造商：

    HUBER+SUHNER

  • 功能描述：

    RF COAXIAL CABLE

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更多MF-141供應商 更新時間2025-4-9 16:34:00

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