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MRF175GU

N-CHANNELMOSBROADBANDRFPOWERFETs

TheRFMOSFETLine RFPower Field-EffectTransistors N-ChannelEnhancement-mode Designedforbroadbandcommercialandmilitaryapplicationsusingpushpullcircuitsatfrequenciesto500MHz.Thehighpower,highgainandbroadbandperformanceofthesedevicesmakespossiblesolidstatetransm

MACOM

Tyco Electronics

MRF175GU

TheRFMOSFETLine200/150W,500MHz,28V

Designedforbroadbandcommercialandmilitaryapplicationsusingpushpullcircuitsatfrequenciesto500MHz.Thehighpower,highgainandbroadbandperformanceofthesedevicesmakespossiblesolidstatetransmittersforFMbroadcastorTVchannelfrequencybands. N–Channelenhancementmode

MA-COM

M/A-COM Technology Solutions, Inc.

MRF175GU

RFPOWERFIELD-EFFECTTRANSISTOR

DESCRIPTION: TheASIMRF175GUisaN-ChannelEnhancement-ModePushPullMOSFET,DesignedforFM,andTVSolidStateTransmitterApplicationsupto500MHz.

ASI

Advanced Semiconductor

MRF175GU

TheRFMOSFETLine200/150W,500MHz,28V

MA-COM

M/A-COM Technology Solutions, Inc.

MRF175GU

RFPowerField-EffectTransistors

TheRFMOSFETLine RFPower ???????Field-EffectTransistors N–ChannelEnhancement–Mode Designedforbroadbandcommercialandmilitaryapplicationsusingpushpullcircuitsatfrequenciesto500MHz.Thehighpower,highgainandbroadbandperformanceofthesedevicesmakespossiblesolidstate

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MRF175GV

N-CHANNELMOSBROADBANDRFPOWERFETs

TheRFMOSFETLine RFPower Field-EffectTransistors N-ChannelEnhancement-mode Designedforbroadbandcommercialandmilitaryapplicationsusingpushpullcircuitsatfrequenciesto500MHz.Thehighpower,highgainandbroadbandperformanceofthesedevicesmakespossiblesolidstatetransm

MACOM

Tyco Electronics

MRF175GV

N-CHANNELMOSBROADBANDRFPOWERFETs

TheRFMOSFETLine RFPower ???????Field-EffectTransistors N–ChannelEnhancement–Mode Designedforbroadbandcommercialandmilitaryapplicationsusingpushpullcircuitsatfrequenciesto500MHz.Thehighpower,highgainandbroadbandperformanceofthesedevicesmakespossiblesolidstate

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF175GV

TheRFMOSFETLine200/150W,500MHz,28V

Designedforbroadbandcommercialandmilitaryapplicationsusingpushpullcircuitsatfrequenciesto500MHz.Thehighpower,highgainandbroadbandperformanceofthesedevicesmakespossiblesolidstatetransmittersforFMbroadcastorTVchannelfrequencybands. N–Channelenhancementmode

MA-COM

M/A-COM Technology Solutions, Inc.

MRF175GV

RFPOWERFIELD-EFFECTTRANSISTOR

DESCRIPTION: TheASIMRF175GVisaN-ChannelEnhancement-ModePushPullMOSFET,DesignedforFM,andTVSolidStateTransmitterApplicationsupto500MHz.

ASI

Advanced Semiconductor

MRF175GV

N-CHANNELMOSBROADBANDRFPOWERFETs

MACOM

Tyco Electronics

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20+
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6985
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NA
5000
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23+
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13000
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2020+
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80000
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更多MF-USML175供應(yīng)商 更新時(shí)間2025-3-26 15:00:00

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