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MGP11N60E

Insulated Gate Bipolar Transistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGP11N60E

SHORT CIRCUIT RATED LOW ON-VOLTAGE

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP11N60ED

SHORT CIRCUIT RATED LOW ON-VOLTAGE

InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

OM11N60

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They

IRF

International Rectifier

PCFC11N60W

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

PSM11N60CT

11A600VSingleN-ChannelPowerMOSFET

PFC

PFC Device Inc.

PSM11N60CTF

11A600VSingleN-ChannelPowerMOSFET

PFC

PFC Device Inc.

SIHH11N60E

ESeriesPowerMOSFET

FEATURES ?Fullylead(Pb)-freedevice ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Kelvinconnectionforreducedgatenoise ?Materialcategorization:fordefinit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    MGP11N60E

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON/英飛凌
23+
TO-220
10000
公司只做原裝正品
 詢價(jià)
Infineon/英飛凌
22+
TO-220
6000
十年配單,只做原裝
 詢價(jià)
Infineon/英飛凌
23+
TO-220
6000
原裝正品，支持實(shí)單
 詢價(jià)
Infineon/英飛凌
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
INFINEON/英飛凌
22+
TO-220
94163
詢價(jià)
INFINEON
24+
TO-TO-220
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
ON
24+
90000
詢價(jià)
ON/安森美
21+
NA
12820
只做原裝,質(zhì)量保證
 詢價(jià)
ON
2022+
NA
8600
原裝正品,歡迎來電咨詢!
 詢價(jià)
ON/安森美
22+
N/A
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價(jià)
更多MGP11N60E供應(yīng)商 更新時(shí)間2025-2-6 14:30:00

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