首頁>MGW12N120D>規(guī)格書詳情
MGW12N120D中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書
MGW12N120D規(guī)格書詳情
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
???????N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.
? Industry Standard High Power TO–247 Package with Isolated Mounting Hole
? High Speed Eoff: 150 J/A typical at 125°C
? High Short Circuit Capability – 10 s minimum
? Soft Recovery Free Wheeling Diode is included in the package
? Robust High Voltage Termination
? Robust RBSOA
產(chǎn)品屬性
- 型號：
MGW12N120D
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
Motorola Inc
- 制造商：
ON Semiconductor
- 制造商：
MOTOROLA
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | ||
ON/安森美 |
22+ |
TO |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
COSEL |
23 |
DIP |
55000 |
原廠渠道原裝正品假一賠十 |
詢價 | ||
ON/安森美 |
21+ |
NA |
543 |
只做原裝,假一罰十 |
詢價 | ||
ON/安森美 |
22+ |
N/A |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
ON/安森美 |
23+ |
TO-247 |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
ON/安森美 |
23+ |
NA |
25630 |
原裝正品 |
詢價 | ||
COSEL |
25+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
COSEL |
24+ |
DIP |
5000 |
全新原裝,一手貨源,全場熱賣! |
詢價 | ||
ON/安森美 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價 |
