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MH16S64BAMD-6中文資料三菱電機(jī)數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
MH16S64BAMD-6 |
| 功能描述 | 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM |
| 文件大小 |
579.89 Kbytes |
| 頁面數(shù)量 |
40 頁 |
| 生產(chǎn)廠商 | Mitsubishi Electric Semiconductor |
| 企業(yè)簡稱 |
Mitsubishi【三菱電機(jī)】 |
| 中文名稱 | 三菱電機(jī)株式會社官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-2-19 22:50:00 |
MH16S64BAMD-6規(guī)格書詳情
DESCRIPTION
The MH16S64BAMD is 16777216 - word x 64-bit Synchronous DRAM module. This consist of sixteen industry standard 8M x 8 Synchronous DRAMs in TSOP.
The TSOP on a card edge dual in-line package provides any application where high densities and large of quantities memory are required.
This is a socket-type memory module ,suitable for easy interchange or addition of module.
FEATURES
? Utilizes industry standard 8M X 8 Synchronous DRAMs in TSOP package
? Single 3.3V +/- 0.3V supply
? Max.Clock frequency 133MHz
? Fully synchronous operation referenced to clock rising edge
? 4-bank operation controlled by BA0,BA1(Bank Address)
? /CAS latency -2/3(programmable,at buffer mode)
? LVTTL Interface
? Burst length 1/2/4/8/Full Page(programmable)
? Burst type- Sequential and interleave burst (programmable)
? Random column access
? Burst Write / Single Write(programmable)
? Auto precharge / All bank precharge controlled by A10
? Auto refresh and Self refresh
? 4096 refresh cycles every 64ms
APPLICATION
Main memory or graphic memory in computer systems
