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MH64S72VJG-6中文資料三菱電機(jī)數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

MH64S72VJG-6
廠商型號(hào)

MH64S72VJG-6

功能描述

4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

文件大小

958.67 Kbytes

頁(yè)面數(shù)量

57 頁(yè)

生產(chǎn)廠商 Mitsubishi Electric Semiconductor
企業(yè)簡(jiǎn)稱(chēng)

Mitsubishi三菱電機(jī)

中文名稱(chēng)

三菱電機(jī)株式會(huì)社官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-21 16:54:00

人工找貨

MH64S72VJG-6價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

MH64S72VJG-6規(guī)格書(shū)詳情

DESCRIPTION

The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.

The TSOP on a card edge dual in-line package prov ides any application where high densities and large of quantities memory are required.

This is a socket-ty pe memory module ,suitable f or easy interchange or addition of module.

FEATURES

? Utilizes industry standard 64M X 4 Synchronous DRAMs in TSOP package , industrystandard Resistered buffer in TSSOP package,industry standard PLL in TSSOP package

? Single 3.3V +/- 0.3V supply

? Max.Clock frequency 133MHz forFully synchronous operation

? referenced to clock rising edge

? 4-bank operation controlled byBA0,BA1(Bank Address)

? /CAS latency-2/3(programmable,at buffer mode)

? LVTTL Interface

? Burst length 1/2/4/8/Full Page(programmable)

? Burst type- Sequential and interleave burst (programmable)

? Random column access

? Burst W rite / Single W rite(programmable)

? Auto precharge / All bank precharge controlled by A10

? Auto refresh and Self refresh

? 8192 refresh cycles every 64ms

APPLICATION

Main memoryor graphic memoryin computer systems

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3000
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