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MJE271

2.0AMPERECOMPLEMENTARYPOWERDARLINGTONTRANSISTORS100VOLTS15WATTS

ComplementarySiliconPowerTransistors ...designedspecificallyforusewiththeMC3419Solid–StateSubscriberLoopInterfaceCircuit(SLIC). ?HighSafeOperatingArea IS/B@40V,1.0s=0.375A—TO–126 ?Collector–EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) ?HighDC

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE271

2.0AMPERECOMPLEMENTARYPOWERDARLINGTONTRANSISTORS100VOLTS,15WATTS

ComplementarySiliconPowerTransistors Features ?HighSafeOperatingArea IS/B@40V,1.0s=0.375A ?Collector?EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) ?HighDCCurrentGain hFE@120mA,10V=1500(Min) ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE271

NPNPLASTICPOWERTRANSISTOR

MJE270NPNPLASTICPOWERTRANSISTOR MJE271PNPPLASTICPOWERTRANSISTOR MediumPowerDarlingtonsforLinearandSwitchingApplications

TEL

TRANSYS Electronics Limited

MJE271

PLASTICPOWERTRANSISTOR

CDIL

Continental Device India Limited

MJE271G

2.0AMPERECOMPLEMENTARYPOWERDARLINGTONTRANSISTORS100VOLTS,15WATTS

ComplementarySiliconPowerTransistors Features ?HighSafeOperatingArea IS/B@40V,1.0s=0.375A ?Collector?EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) ?HighDCCurrentGain hFE@120mA,10V=1500(Min) ?Pb?FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE271G

ComplementarySiliconPowerTransistors

ComplementarySiliconPowerTransistors Features ?HighSafeOperatingArea IS/B@40V,1.0s=0.375A ?Collector?EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) ?HighDCCurrentGain hFE@120mA,10V=1500(Min) ?TheseDevicesarePb?FreeandareRoHSCompliant*

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE271G

ComplementarySiliconPowerTransistors

Features ?HighSafeOperatingArea IS/B@40V,1.0s=0.375A ?Collector?EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) ?HighDCCurrentGain hFE@120mA,10V=1500(Min) ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBFJ271

P-ChannelSwitch

Features ?Thisdeviceisdesignedforlowlevelanalogswitchingsampleandholdcircuitsandchopperstabilizedamplifiers. ?Sourcedfromprocess88.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NTE271

SiliconComplementaryTransistorsDarlingtonPowerAmp,Switch

Description: TheNTE270(NPN)andNTE271(PNP)aresiliconDarlingtoncomplementarypowertransistorsinaTO218typepackagedesignedforgeneralpurposeamplifierandlowfrequencyswitchingapplications. Features: ?HighDCCurrentGain:hFE=1000Min@IC=5A,VCE=4V ?Collec

NTE

NTE Electronics

OP271

HIGHSPEEDDUALOPERATIONALAMPLIFIER

GENERALDESCRIPTION TheOP271isaunity-gainstablemonolithicdualopampfeaturingexcellentspeed,8.5V/μstypical,andfastsettlingtime,2μstypicalto0.01.TheOP271hasagainbandwidthof5MHzwithahighphasemarginof62°. FEATURES ?ExcellentSpeed????????8.5V/μ

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MI-271-MY-S

  • 制造商：

    Vicor Corporation

  • 功能描述：

    CONVRT DC/DC CONVRT DC/DC 165VIN

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VICOR
23+
模塊
900
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VICOR
23+
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85
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VICOR
23+
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13000
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VICOR
24+
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2176
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VICOR
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MODULE
8513
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VICOR
24+
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6430
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原廠
2023+
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600
專(zhuān)營(yíng)模塊,繼電器,公司原裝現(xiàn)貨
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VICOR
2018
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300
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ElpacPowerSystems
新
5
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Elpac Power Systems
2022+
1
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更多MI-271-MY-S供應(yīng)商 更新時(shí)間2025-5-15 16:45:00

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