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MJD31C

Low voltage NPN power transistor

Description Thedeviceismanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Surface-mountingTO-252powerpackagein tapeandreel ■ComplementarytothePNPtyp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

MJD31C

Low voltage NPN power transistor

Description ThedeviceismanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Generalfeatures ■Thisdeviceisqualifiedforautomotiveapplication ■Surface-mounting

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

MJD31C-13

NPN SURFACE MOUNT TRANSISTOR

Features ?BVCEO>100V ?IC=3AhighContinuousCollectorCurrent ?ICM=5APeakPulseCurrent ?IdealforPowerSwitchingorAmplificationApplications ?ComplementaryPNPType:MJD32C ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”

DIODES

Diodes Incorporated

MJD31C1G

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves ?StraightLeadVersioninPlasticSleeves(“1”Suffix) ?LeadFormedVersi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD31CA

Marking：MJD31CA；Package：DPAK；100 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32CA 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Elec

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

MJD31CG

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves ?StraightLeadVersioninPlasticSleeves(“1”Suffix) ?LeadFormedVersi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD31CH-Q

Marking：MJD31CAH；Package：DPAK；100 V, 3 A NPN high power bipolar transistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?HighcurrentgainatVCE=60V ?ElectricallysimilartopopularMJD31series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

MJD31CH-QJ

100 V, 3 A NPN high power bipolar transistor

Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?HighcurrentgainatVCE=60V ?ElectricallysimilartopopularMJD31series ?Lowcollectoremittersaturationvoltage ?Fastswitchingspeeds ?Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

MJD31CQ

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

Description ThisBipolarJunctionTransistor(BJT)hasbeendesignedtomeetthestringentrequirementsofAutomotiveApplications. Features ?BVCEO>100V ?IC=3AhighContinuousCollectorCurrent ?ICM=5APeakPulseCurrent ?IdealforPowerSwitchingorAmplificationApplications ?C

DIODES

Diodes Incorporated

MJD31CQ-13

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

Description ThisBipolarJunctionTransistor(BJT)hasbeendesignedtomeetthestringentrequirementsofAutomotiveApplications. Features ?BVCEO>100V ?IC=3AhighContinuousCollectorCurrent ?ICM=5APeakPulseCurrent ?IdealforPowerSwitchingorAmplificationApplications ?C

DIODES

Diodes Incorporated

晶體管資料

  • 型號：

    MJD31

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

  • 性質(zhì)：

    低頻或音頻放大 （LF）_功率放大 （PA）

  • 封裝形式：

    貼片封裝

  • 極限工作電壓：

  • 最大電流允許值：

    3A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號：

  • 最大耗散功率：

    15W

  • 放大倍數(shù)：

  • 圖片代號：

    G-217

  • vtest：

    0

  • htest：

    999900

  • atest：

    3

  • wtest：

    15

詳細參數(shù)

  • 型號：

    MJD31

  • 制造商：

    ONSEMI

  • 制造商全稱：

    ON Semiconductor

  • 功能描述：

    Complementary Power Transistors

供應(yīng)商型號品牌批號封裝庫存備注價格
ONSEMICONDU
24+
原裝進口原廠原包接受訂貨
2866
原裝現(xiàn)貨假一罰十
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
ON
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ON
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
ON
18+
TO-252
41200
原裝正品,現(xiàn)貨特價
 詢價
ON/安森美
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ON(安森美)
6000
詢價
MJD31
3
3
詢價
ON(安森美)
22+
NA
8000
原廠原裝現(xiàn)貨
 詢價
ON/安森美
22+
TO-252
100000
代理渠道/只做原裝/可含稅
 詢價
更多MJD31供應(yīng)商 更新時間2025-4-5 13:30:00

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