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MJE1090

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. ?HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc ?TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MRF1090MA

MICROWAVEPOWERTRANSISTORNPNSILICON

TheRFLine MicrowavePulsePowerTransistors DesignedforClassBandCcommonbaseamplifierapplicationsinshortpulseTACAN,IFF,andDMEtransmitters. ?GuaranteedPerformance@1090MHz,50Vdc OutputPower=90WattsPeak MinimumGain=8.4dB ?100TestedforLoadMismatchat

MACOM

Tyco Electronics

MRF1090MA

MICROWAVEPOWERTRANSISTORS

TheRFLine MicrowavePulsePowerTransistors DesignedforClassBandCcommonbaseamplifierapplicationsinshortpulseTACAN,IFF,andDMEtransmitters. ?GuaranteedPerformance@1090MHz,50Vdc OutputPower=90WattsPeak MinimumGain=8.4dB ?100TestedforLoadMismatcha

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF1090MA

MicrowavePulsePowerSiliconNPNTransistor90W(peak),960-1215MHz

DesignedforClassBandCcommonbaseamplifierapplicationsinshortpulseTACAN,IFF,andDMEtransmitters. ?Guaranteedperformance@1090MHz,50Vdc Outputpower=90Wpeak Minimumgain=8.4dB ?100testedforloadmismatchatallphaseangleswith10:1VSWR ?Industrystandard

MA-COM

M/A-COM Technology Solutions, Inc.

MRF1090MB

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASIMRF1090MBisDesignedforHighPeakpower&lowdutycycle,IFF,DME,andTACANApplications. FEATURES: ?InternalInputMatchingNetwork ?PG=8.4dBat90W/1150MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

MRF1090MB

MicrowavePulsePowerSiliconNPNTransistor90W(peak),960-1215MHz

MicrowavePulsePowerSiliconNPNTransistor90W(peak),960–1215MHz DesignedforClassBandCcommonbaseamplifierapplicationsinshortpulseTACAN,IFF,andDMEtransmitters. ?Guaranteedperformance@1090MHz,50Vdc Outputpower=90WPeak Minimumgain=8.4dB ?100testedf

MA-COM

M/A-COM Technology Solutions, Inc.

MRF1090MB

MICROWAVEPOWERTRANSISTORNPNSILICON

TheRFLine MicrowavePulsePowerTransistors DesignedforClassBandCcommonbaseamplifierapplicationsinshortpulseTACAN,IFF,andDMEtransmitters. ?GuaranteedPerformance@1090MHz,50Vdc OutputPower=90WattsPeak MinimumGain=8.4dB ?100TestedforLoadMismatcha

MACOM

Tyco Electronics

MRF1090MB

MICROWAVEPOWERTRANSISTORS

TheRFLine MicrowavePulsePowerTransistors DesignedforClassBandCcommonbaseamplifierapplicationsinshortpulseTACAN,IFF,andDMEtransmitters. ?GuaranteedPerformance@1090MHz,50Vdc OutputPower=90WattsPeak MinimumGain=8.4dB ?100TestedforLoadMismatcha

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF1090MB

MicrowavePulsePowerSiliconNPNTransistor

MA-COM

M/A-COM Technology Solutions, Inc.

MRF1090MX

MICROWAVEPOWERTRANSISTORS

TheRFLine MicrowavePulsePowerTransistors DesignedforClassBandCcommonbaseamplifierapplicationsinshortpulseTACAN,IFF,andDMEtransmitters. ?GuaranteedPerformance@1090MHz,50Vdc OutputPower=90WattsPeak MinimumGain=8.4dB ?100TestedforLoadMismatcha

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

晶體管資料

  • 型號：

    MJE1090

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-P+Darl

  • 性質(zhì)：

    低頻或音頻放大 （LF）_開關(guān)管 （S）_功率放大 （L

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    60V

  • 最大電流允許值：

    5A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號：

    BD646,BD698,BD898,BDW24A,BDW64A,FC75B,

  • 最大耗散功率：

    70W

  • 放大倍數(shù)：

    β>750

  • 圖片代號：

    B-21

  • vtest：

    60

  • htest：

    999900

  • atest：

    5

  • wtest：

    70

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
24+
N/A
4500
詢價
MOT
24+
TO-3P
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
MOT
8513
4
公司優(yōu)勢庫存 熱賣中!
 詢價
ISC/固電
23+
TO-3PN
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
ON
23+
TO-126F
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
MOTOROLA/摩托羅拉
24+
TO-3P
240
現(xiàn)貨供應(yīng)
 詢價
ON
20+
TO-126
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
MOTOROLA/摩托羅拉
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
 詢價
ON/安森美
23+
TO-3P
10000
公司只做原裝正品
 詢價
ON/安森美
23+
TO-126
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多MJE1090供應(yīng)商 更新時間2025-2-6 16:00:00

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