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MJE800

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE800

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

SAVANTIC

Savantic, Inc.

MJE800

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE800

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE800

Monolithic Construction With Built-in Base- Emitter Resistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ??????? ?HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC ?ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJE800

Plastic Darlington Complementary Silicon Power Transistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MJE800

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美國中央半導體

MJE800

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE800

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

MJE800G

Plastic Darlington Complementary Silicon Power Transistors

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導體安森美半導體公司

晶體管資料

  • 型號:

    MJE800

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質:

    低頻或音頻放大 (LF)_開關管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    4A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD263,BD677,BD777,FD50B,2N3038,2N6039,

  • 最大耗散功率:

    40W

  • 放大倍數(shù):

    β>750

  • 圖片代號:

    B-21

  • vtest:

    60

  • htest:

    999900

  • atest:

    4

  • wtest:

    40

詳細參數(shù)

  • 型號:

    MJE800

  • 功能描述:

    達林頓晶體管 4A 60V Bipolar

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶體管極性:

    NPN 集電極—發(fā)射極最大電壓

  • VCEO:

    50 V 發(fā)射極 - 基極電壓

  • VEBO:

    集電極—基極電壓

  • 最大直流電集電極電流:

    0.5 A

  • 最大工作溫度:

    + 150 C

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-18

  • 封裝:

    Reel

供應商型號品牌批號封裝庫存備注價格
on
20+
4500
原裝現(xiàn)貨 也有國產(chǎn)替代
詢價
onsemi(安森美)
23+
TO-126
1259
原廠訂貨渠道,支持BOM配單一站式服務
詢價
M
24+
TO 126
157363
明嘉萊只做原裝正品現(xiàn)貨
詢價
MOT
24+
TO-126
4000
原裝原廠代理 可免費送樣品
詢價
ON
2024+
TO-225-3
32560
原裝優(yōu)勢絕對有貨
詢價
ON
24+
N/A
5400
詢價
ON
2016+
TO-126
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費送樣品!
詢價
FSC
23+
TO-126
5500
現(xiàn)貨,全新原裝
詢價
FAIR
24+
原廠封裝
327
原裝現(xiàn)貨假一罰十
詢價
FAIRCHILD
2020+
TO126F
4500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
更多MJE800供應商 更新時間2025-2-12 15:07:00