MOC8106W中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.

Features

■ CNY171/2/3/4 and CNY17F1/2/3/4 are also available in

white package by specifying M suffix (eg. CNY17F2M)

■ UL recognized (File # E90700)

■ VDE recognized

– Add option V for white package (e.g., CNY17F2VM)

– File #102497

– Add option ‘300’ for black package (e.g., CNY17F2300)

– File #94766

■ Current transfer ratio in select groups

■ High BVCEO—70V minimum (CNY17X/M, CNY17FX/M, MOC8106/7/8)

■ Closely matched current transfer ratio (CTR) minimizes unit

to-unit variation.

■ Very low coupled capacitance along with no chip to pin 6

base connection for minimum noise susceptability

(CNY17FX/M, MOC810X)

Applications

■ Power supply regulators

■ Digital logic inputs

■ Microprocessor inputs

■ Appliance sensor systems

■ Industrial controls