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MZ828

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MicrosemiMicrosemi Corporation

美高森美美高森美公司

NTE828

IntegratedCircuitAudioPowerAmp,1.5W

Description: TheNTE828isanaudioamplifierina14–LeadDIPtypepackagedesignedforuseinmediumpowerconsumerapplications.Thegainisinternallysetto20tokeepexternalpartcountlow,buttheadditionofanexternalresistorandcapacitorbetweenPin2andPin6willincreasethegain

NTE

NTE Electronics

OPA828

Low-Offset,Low-Drift,Low-Noise,50-MHz,36-VJFET-InputOperationalAmplifier

TI1Texas Instruments

德州儀器

OPA828

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-VJFET-Input,OperationalAmplifiers

1Features ?Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz ?Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS ?Lowinputbiascurrent:1pA ?Inputoffsetvoltage:50μV ?Inputoffsetdrift:0.45μV/°C ?MUX-friendlyinputs ?Gainbandwidth:45MHz ?Slewrate:150V/μs ?14-bitse

TITexas Instruments

德州儀器美國德州儀器公司

OPA828

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features ?Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz ?Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS ?Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) ?Inputoffsetvoltage: –25μV(DGN) –50μV(D) ?Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) ?MUX-friend

TITexas Instruments

德州儀器美國德州儀器公司

OPA828ID

Low-Offset,Low-Drift,Low-Noise,50-MHz,36-VJFET-InputOperationalAmplifier

TI1Texas Instruments

德州儀器

OPA828ID

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-VJFET-Input,OperationalAmplifiers

1Features ?Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz ?Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS ?Lowinputbiascurrent:1pA ?Inputoffsetvoltage:50μV ?Inputoffsetdrift:0.45μV/°C ?MUX-friendlyinputs ?Gainbandwidth:45MHz ?Slewrate:150V/μs ?14-bitse

TITexas Instruments

德州儀器美國德州儀器公司

OPA828ID

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features ?Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz ?Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS ?Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) ?Inputoffsetvoltage: –25μV(DGN) –50μV(D) ?Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) ?MUX-friend

TITexas Instruments

德州儀器美國德州儀器公司

OPA828IDGNR

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features ?Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz ?Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS ?Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) ?Inputoffsetvoltage: –25μV(DGN) –50μV(D) ?Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) ?MUX-friend

TITexas Instruments

德州儀器美國德州儀器公司

OPA828IDGNT

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features ?Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz ?Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS ?Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) ?Inputoffsetvoltage: –25μV(DGN) –50μV(D) ?Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) ?MUX-friend

TITexas Instruments

德州儀器美國德州儀器公司

詳細參數(shù)

  • 型號：

    MR828

  • 制造商：

    SEMIKRON

  • 制造商全稱：

    Semikron International

  • 功能描述：

    Fast silicon rectifier diodes

供應商型號品牌批號封裝庫存備注價格
VISHAYMAS
25+23+
DO-15
53337
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
INTERSI
2020+
CLCC
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
INTERSIL
22+
CLCC
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
INTERSI
23+
CLCC
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
INTERSIL
QQ咨詢
CLCC
827
全新原裝 研究所指定供貨商
 詢價
NEC
1736+
RELAY
8529
專營繼電器只做原裝正品假一賠十!
 詢價
INT
620
412
原裝正品
 詢價
INTEL
2021+
60000
原裝現(xiàn)貨，歡迎詢價
 詢價
H
24+
LCC
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價
原裝
2308+
原裝
4862
只做進口原裝!假一賠百!自己庫存價優(yōu)!
 詢價
更多MR828供應商 更新時間2025-3-31 16:50:00

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