| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MouldedTypeStraightPlugs | HOSIDEN Hosiden Corporation | HOSIDEN | ||
26WBTLand2x13WSEpoweramplifiers | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
26WBTLand2x13WSEpoweramplifiers | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TransistorSiliconNPNEpitaxialType High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications ?HighDCcurrentgain:hFE=120to300(IC=0.1A) ?Lowcollector-emittersaturation:VCE(sat)=0.14V(max) ?High-speedswitching:tf=0.2μs(typ) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
SpecificationofHighPowerIREmittingDiodeChip | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ONSEMICONDU |
24+ |
原廠封裝 |
6472 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ON |
2017+ |
NA |
28562 |
只做原裝正品假一賠十! |
詢價(jià) | ||
安森美 |
21+ |
12588 |
原裝正品,價(jià)格優(yōu)勢量大可定 |
詢價(jià) | |||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
ON |
20+ |
SMD |
11520 |
特價(jià)全新原裝公司現(xiàn)貨 |
詢價(jià) | ||
ON Semiconductor |
2010+ |
N/A |
5564 |
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
ON/安森美 |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯優(yōu)勢 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) | ||
ON |
1809+ |
T-18軸向 |
6675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
ON/安森美 |
22+ |
SMD |
9000 |
原裝正品 |
詢價(jià) |
