MRF171A分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.

N–Channel enhancement mode MOSFET

? Guaranteed performance at 150 MHz, 28 Vdc

Output power = 45 W

Power gain = 17 dB (min)

Efficiency = 60 (min)

? Excellent thermal stability, ideally suited for Class A operation

? Facilitates manual gain control, ALC and modulation techniques

? 100 tested for load mismatch at all phase angles with 30:1 VSWR

? Low Crss – 8 pF @ VDS = 28 V

? Gold top metal

Typical data for power amplifier applications in industrial, commercial and amateur radio equipment

? Typical performance at 30 MHz, 28 Vdc

Output power = 30 W (PEP)

Power gain = 20 dB (typ.)

Efficiency = 50 (typ.)

IMD(d3) (30 W PEP) –32 dB (typ.)