| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN SILICON RF TRANSISTOR DESCRIPTION: TheMRF581isDesignedforHighcurrentlowPowerAmplifierApplicationsupto1.0GHz. FEATURES: ?LowNoiseFigure ?LowIntermodulationDistortion ?HighGain ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON TheRFLine NPNSilicon High-FrequencyTransistor Designedforhighcurrent,lowpoweramplifiersupto1.0GHz. ?LowNoise(2.0dB@500MHz) ?LowIntermodulationDistortion ?HighGain ?State–of–the–ArtTechnology FineLineGeometry ArsenicEmitters GoldTopMetallization | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | ADPOW Advanced Power Technology | ADPOW | ||
NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: TheASIMRF5812isDesignedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. FEATURES: ?LowNoise–2.5dB@500MHz ?Ftau–5.0GHz@10V,75mA ?CostEffectiveSO-8package | ASI Advanced Semiconductor | ASI | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | ADPOW Advanced Power Technology | ADPOW | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?GainatOptimumNoiseFigure=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveMacroXPackage | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
超高頻/特高頻 （UHF）_前置放大 （V）_混頻 （M）
- 封裝形式：
直插封裝
- 極限工作電壓：
- 最大電流允許值：
- 最大工作頻率：
1000MHZ
- 引腳數(shù)：
4
- 可代換的型號：
BF357,BF377,BF378,3DG44A,
- 最大耗散功率：
- 放大倍數(shù)：
- 圖片代號：
D-13
- vtest：
0
- htest：
1000000000
- atest：
0
- wtest：
0
詳細(xì)參數(shù)
- 型號：
MRF5
- 制造商：
Ferraz Shawmut
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
BEL |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
MOT |
97+ |
高頻管 |
2255 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
MOTOROLA |
24+/25+ |
105 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
FREESCAL |
23+ |
高頻模組 |
3562 |
詢價 | |||
FREESCALE |
05/06+ |
1008 |
全新原裝100真實現(xiàn)貨供應(yīng) |
詢價 | |||
東芝 |
100 |
原裝現(xiàn)貨,價格優(yōu)惠 |
詢價 | ||||
MOTOROLA |
13+ |
TO-57 |
6878 |
原裝分銷 |
詢價 | ||
FREESCAIE |
17+ |
SMD |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
MOTOROLA |
23+ |
高頻管 |
1200 |
專營高頻管模塊,全新原裝! |
詢價 | ||
Microsemi |
23+ |
RF-FET |
7750 |
全新原裝優(yōu)勢 |
詢價 |
