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UPB581A

3GHzINPUTDIVIDEBY2PRESCALERICFORDBSTUNERS

μPB1508GVisa3.0GHzinputdivideby2prescalerICforDBStunerapplications.μPB1508GVcanmakeVHF/UHFbandPLLfrequencysynthesizerapplytoDBS/ECStuners.μPB1508GVisashrinkpackageversionofμPB584Gsothatthissmallpackagecontributestoreducethemountingspace. μPB1508GVism

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPB581B

DIVIDE-BY-2PRESCALER

DESCRIPTION TheUPB581seriesofdevicesaredivide-by-2siliconbipolardigitalprescalers.Theyfeaturehighfrequencyresponseandoperatefromasingle5voltsupply.Theseriesisavailableintwopackagestyles:8leadceramicflatpackage(UPB581B)andan8pinDIP(UPB581C).Application

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPB581C

3GHzINPUTDIVIDEBY2PRESCALERICFORDBSTUNERS

μPB1508GVisa3.0GHzinputdivideby2prescalerICforDBStunerapplications.μPB1508GVcanmakeVHF/UHFbandPLLfrequencysynthesizerapplytoDBS/ECStuners.μPB1508GVisashrinkpackageversionofμPB584Gsothatthissmallpackagecontributestoreducethemountingspace. μPB1508GVism

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPB581C

DIVIDE-BY-2PRESCALER

DESCRIPTION TheUPB581seriesofdevicesaredivide-by-2siliconbipolardigitalprescalers.Theyfeaturehighfrequencyresponseandoperatefromasingle5voltsupply.Theseriesisavailableintwopackagestyles:8leadceramicflatpackage(UPB581B)andan8pinDIP(UPB581C).Application

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

VDD581LCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD581LNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD581MCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD581MNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD581SCTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDD581SNTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    MRF581A

  • 制造商：

    Microsemi Corporation

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極（BJT）- 射頻

  • 包裝：

    卷帶（TR）

  • 晶體管類型：

    NPN

  • 電壓 - 集射極擊穿（最大值）：

    15V

  • 頻率 - 躍遷：

    5GHz

  • 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）：

    3dB ~ 3.5dB @ 500MHz

  • 增益：

    13dB ~ 15.5dB

  • 功率 - 最大值：

    1.25W

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)（最小值）：

    90 @ 50mA，5V

  • 電流 - 集電極 (Ic)（最大值）：

    200mA

  • 工作溫度：

    150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    微型-X 陶瓷 84C

  • 供應(yīng)商器件封裝：

    微型-X 陶瓷 84C

  • 描述：

    RF TRANS NPN 15V 5GHZ MICRO X

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Microse
21+
VQFN
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
MOTOROLA
24+
3343
原裝正品 特價(jià)現(xiàn)貨(香港 新加坡 日本)
 詢價(jià)
24+
5000
公司存貨
 詢價(jià)
MOT
23+
高頻管
650
專營高頻管模塊,全新原裝!
 詢價(jià)
Microsemi
23+
RF-FET
7750
全新原裝優(yōu)勢
 詢價(jià)
MOT
23+
DIP-40
5000
原裝正品,假一罰十
 詢價(jià)
MOTOROLA
24+
NA
2000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價(jià)
LT
23+
SOP8
12000
全新原裝假一賠十
 詢價(jià)
MOTOROLA
24+
SMD
3343
長期供應(yīng)原裝現(xiàn)貨實(shí)單可談
 詢價(jià)
MOTOROLA/摩托羅拉
24+
194
現(xiàn)貨供應(yīng)
 詢價(jià)
更多MRF581A供應(yīng)商 更新時(shí)間2025-4-25 18:57:00

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