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SFR9220TM

P-channelEnhancementModePowerMOSFET

Features ?VDS=-200V,ID=-3.6A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

SFRSLASHU9220

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=-200V ■LowerRDS(ON):1.111Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SFRU9220

AvalancheRuggedTechnology

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SFRU9220

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=-200V ■LowerRDS(ON):1.111Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SFRU9220

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SIHFD9220

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR9220

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9220,SiHFR9220) ?Straightlead(IRFUFU9220,SiHFU9220) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR9220

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR9220

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR9220

PowerMOSFET

DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis

KERSEMI

Kersemi Electronic Co., Ltd.

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23+
SOT23-6
28500
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24+
SOT23-6
20000
十年沉淀唯有原裝
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MST
24+
SOT23-6
65300
一級(jí)代理/放心購(gòu)買!
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MST(邁爾斯通)
2447
SOT-23-6
105000
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2021+
SOT-23-6
499
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20+
SOT-23-6
3000
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MST
23+
SOT23-6
51000
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MST/邁爾斯通
21+
原廠原封
5000
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MST/邁爾斯通
2022+
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25000
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MST
14+
SOT23-6
5600
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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