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FLASHMEMORY GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5 | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
FLASHMEMORY GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5 | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron |
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