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MT48LC8M16A2TG-7E

SYNCHRONOUSDRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國(guó)鎂光科技有限公司

MT48LC8M16A2TG-7EIT

SYNCHRONOUSDRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國(guó)鎂光科技有限公司

MT48LC8M16A2TG-7EL

SYNCHRONOUSDRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國(guó)鎂光科技有限公司

MT48LC8M16A2TG-7ELIT

SYNCHRONOUSDRAM

GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432-

MicronMicron Technology

鎂光美國(guó)鎂光科技有限公司

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