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MT4LC16M4G3

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT4LC16M4G3DJ-5

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT4LC16M4G3DJ-5S

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT4LC16M4G3DJ-6

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT4LC16M4G3DJ-6S

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT4LC16M4G3TG-5

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT4LC16M4G3TG-5S

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT4LC16M4G3TG-6

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology

鎂光美國鎂光科技有限公司

MT4LC16M4G3TG-6S

DRAM

GENERALDESCRIPTION The16Megx4DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC16M4H9andMT4LC16M4G3arefunctionallyorganizedas16,777,216locationscontaining4bitseach.The16,777,216memorylo

MicronMicron Technology

鎂光美國鎂光科技有限公司

詳細參數(shù)

  • 型號：

    MT4LC16M4G3

  • 制造商：

    MICRON

  • 制造商全稱：

    Micron Technology

  • 功能描述：

    DRAM

供應商型號品牌批號封裝庫存備注價格
MCT
24+/25+
25
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
24+
5000
公司存貨
 詢價
MT
2016+
TSOP32
6528
只做進口原裝現(xiàn)貨!或訂貨,假一賠十!
 詢價
MT
23+
SOJ32
5000
原裝正品,假一罰十
 詢價
MT
24+
SOJ32
2560
絕對原裝!現(xiàn)貨熱賣!
 詢價
MT
TSOP32
4894
全新原裝進口自己庫存優(yōu)勢
 詢價
MT
17+
TSOP32
9988
只做原裝進口,自己庫存
 詢價
MIC
23+
NA
10986
專做原裝正品,假一罰百!
 詢價
MT
25+23+
TSOP32
34741
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
MICRON
24+
TSOP
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
更多MT4LC16M4G3供應商 更新時間2025-4-26 14:30:00

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