MTB15N06V中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTB15N06V規(guī)格書詳情
TMOS V? Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM
TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density ofour
50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs, TMOSV is designed to with stand high energy in the avalanche and commutation modes.
New Features of TMOS V
? On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on)Technology
? Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
? Avalanche Energy Specified
? IDSSand VDS(on)Specified at Elevated Temperature
? Static Parameters are the Same for both TMOS V and TMOS E–FET
產(chǎn)品屬性
- 型號：
MTB15N06V
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
TO-263 |
60000 |
絕對原裝正品現(xiàn)貨,假一罰十 |
詢價 | ||
CYSTEK |
23+ |
NA/ |
9250 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
MOTOROLA |
22+ |
TO-263 |
3000 |
原裝正品,支持實單 |
詢價 | ||
MOTOROLA |
99+ |
TO263 |
780 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
全宇昕 |
TO-220F |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
mot |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
ON |
23+ |
TO-263 |
6893 |
詢價 | |||
ON/安森美 |
23+ |
NA |
30000 |
房間原裝現(xiàn)貨特價熱賣,有單詳談 |
詢價 | ||
MOTOROLA |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
CYSTEK |
DFN5X6 |
6000 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 |
