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MTB6N60E1中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

MTB6N60E1
廠商型號(hào)

MTB6N60E1

功能描述

TMOS POWER FET 6.0 AMPERES 600 VOLTS

文件大小

160.56 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-21 22:30:00

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MTB6N60E1規(guī)格書詳情

TMOS E-FET? High Energy Power FET D2PAK-SL Straight Lead

N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Robust High Voltage Termination

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

? Short Heatsink Tab Manufactured — Not Sheared

? Specially Designed Leadframe for Maximum Power Dissipation

產(chǎn)品屬性

  • 型號(hào):

    MTB6N60E1

  • 制造商:

    ON Semiconductor

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ON
2020+
SOT-263
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
MOT
9920+
TO-262
6002
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
ON
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
ON/安森美
22+
SOT263
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
NS
23+
NA
586
專做原裝正品,假一罰百!
詢價(jià)
MOTOROLA
22+
TO-263
3000
原裝正品,支持實(shí)單
詢價(jià)
MOT
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
詢價(jià)
ON
23+
TO-263
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價(jià)
mot
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
詢價(jià)
ON
23+
TO-263
6893
詢價(jià)