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MTD2N50E

TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD2N50E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=2A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD2N50E

N??hannel DPAK Power MOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTD2N50E

Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MTD2N50ED

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD2N50EI

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD2N50ELD

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD2N50ELI

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD2N50E1

N??hannel DPAK Power MOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTD2N50E-1

N-Channel 650V (D-S)Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

詳細參數(shù)

  • 型號：

    MTD2N50E

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

供應商型號品牌批號封裝庫存備注價格
ON/安森美
24+
5000
只做原廠渠道 可追溯貨源
 詢價
ON/安森美
24+
TO-252
505348
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
ON
23+
TO-252
6893
詢價
ON
24+
30000
詢價
mot
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
ON
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
MOT
22+23+
TO252
74362
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
ON
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
ON
24+
35200
一級代理/放心采購
 詢價
ON
24+
T0-252
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
更多MTD2N50E供應商 更新時間2025-2-12 11:04:00

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