MTP2N60E中文資料新澤西半導體數(shù)據(jù)手冊PDF規(guī)格書
MTP2N60E規(guī)格書詳情
TMOS E?FET Power Field Effect Transistor
N?Channel Enhancement?Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage?blocking capability without degrading performance over time. In addition, this advanced TMOS E?FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain?to?source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source?to?Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號：
MTP2N60E
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-220 |
6893 |
詢價 | |||
ON |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
ON/安森美 |
23+ |
TO-247 |
15446 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
O |
22+ |
TO-220 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
ON |
2020+ |
TO-220 |
35000 |
100%進口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
IR |
23+ |
TO-220 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
MOT |
05+ |
TO-220 |
3000 |
原裝進口 |
詢價 | ||
ON |
23+ |
TO-220 |
286 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ON |
23+ |
TO-220 |
5800 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
MOTOROLA/摩托羅拉 |
2022 |
TO-220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 |
