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MTP3LP01N3

P-Channel 30 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTP3N08L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3N100

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3N100E

TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM

ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesigna

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3N120E

TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–voltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime.

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3N120E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3N25E

TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowv

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3N25E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3N35

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. ?LowRDs(on) ?VGS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTP3N35

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    MTP3

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Three Phase Bridge(Power Module) 45 A to 100 A

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
23+
TO-220
5500
現(xiàn)貨,全新原裝
 詢價
MOTOROLA
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
ON
23+
TO-220
6893
詢價
SST
24+
PLCC32L
15000
詢價
ON
2020+
TO-220
3000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ON
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
ON
24+
TO-220
4650
詢價
SST
25+
PLCC32L
1000
強調(diào)現(xiàn)貨,隨時查詢!
 詢價
ST
23+
TO-220
5000
原裝正品,假一罰十
 詢價
ON
24+
TO-220
6000
進口原裝正品假一賠十,貨期7-10天
 詢價
更多MTP3供應(yīng)商 更新時間2025-4-22 16:30:00

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