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MTP33N10E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=33A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=60mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP33N10E

TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

TMOSE-FETPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfor

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP33N10E

N??hannel Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

33N10

FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

33N10

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQA33N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=52mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQA33N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA33N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA33N10L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=52mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQAF33N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=25.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.052Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MTP33N10E

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MOT
05+
TO-220
3000
原裝進(jìn)口
 詢價(jià)
ON
23+
TO-220
6893
詢價(jià)
MOT
24+
N/A
3890
詢價(jià)
ON
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價(jià)
ON
19+
TO-220
86192
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
O
24+
TO
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
ON
24+
TO-220
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價(jià)
N/A
2447
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
VBSEMI/臺(tái)灣微碧
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VBsemi
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多MTP33N10E供應(yīng)商 更新時(shí)間2025-5-23 16:05:00

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