MTP55N06Z中文資料摩托羅拉數據手冊PDF規(guī)格書

TMOS E-FET Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Capability Specified at Elevated Temperature

? Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

? Low Stored Gate Charge for Efficient Switching

? Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor–Absorbs High Energy in the

Avalanche Mode

? ESD Protected. Designed to Typically Withstand 400 V

Machine Model and 4000 V Human Body Model.