MTV16N50E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
MTV16N50E規(guī)格書(shū)詳情
TMOS E?FET Power Field Effect Transistor D3PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號(hào)：
MTV16N50E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
ON Semiconductor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托羅拉 |
18+ |
D3PAK |
12500 |
全新原裝正品,本司專(zhuān)業(yè)配單,大單小單都配 |
詢價(jià) | ||
T |
23+ |
TO |
15778 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
MTK |
QFN |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
新 |
8 |
全新原裝 貨期兩周 |
詢價(jià) | ||||
onsemi(安森美) |
23+ |
- |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
3M |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo) |
詢價(jià) | ||
ITT |
20+ |
連接器 |
93 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
24+ |
N/A |
65000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
MTK |
23+ |
QFN |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
3M |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) |
