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MTW45N10E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

MTW45N10E
廠商型號(hào)

MTW45N10E

功能描述

TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM

文件大小

155.55 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡(jiǎn)稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-21 13:48:00

人工找貨

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MTW45N10E規(guī)格書詳情

TMOS E?FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole

N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

? Isolated Mounting Hole Reduces Mounting Hardware

產(chǎn)品屬性

  • 型號(hào):

    MTW45N10E

  • 制造商:

    Rochester Electronics LLC

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
MOT
TO247
699839
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價(jià)
ON
2023+
5800
進(jìn)口原裝,現(xiàn)貨熱賣
詢價(jià)
ONSEMI/安森美
24+
TO247
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
詢價(jià)
MOT
23+
原裝正品現(xiàn)貨
10000
TO247
詢價(jià)
ON
22+
TO-247
4500
鄭重承諾只做原裝進(jìn)口貨
詢價(jià)
2023+
3000
進(jìn)口原裝現(xiàn)貨
詢價(jià)
MOT
05+
TO-247
2500
原裝進(jìn)口
詢價(jià)
ON/安森美
22+
TO247
20000
原裝現(xiàn)貨,假一罰十
詢價(jià)
ON
2020+
TO247
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
MOTOROLA
15+
TO-247
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
詢價(jià)