零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
MTY16N80E | TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM TMOSE?FETPowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | |
MTY16N80E | Power Field Effect Transistor | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarHVHiPerFETPowerMOSFETISOPLUS220 N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS | ||
PolarHVPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarHVPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings | IXYS IXYS Corporation | IXYS | ||
PolarHVPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings | IXYS IXYS Corporation | IXYS | ||
PolarHVPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings | IXYS IXYS Corporation | IXYS |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
4050 |
詢價(jià) | ||||
MOT |
06+ |
TO-3PL |
500 |
原裝庫(kù)存 |
詢價(jià) | ||
ON |
23+ |
TO-264 |
6893 |
詢價(jià) | |||
JFD/DACO |
23+ |
DIP |
15887 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
23+ |
4000 |
正品原裝貨價(jià)格低 |
詢價(jià) | ||||
ON/安森美 |
22+ |
TO-264 |
89151 |
詢價(jià) | |||
MINI |
22+ |
SMD |
8900 |
全新正品現(xiàn)貨 有掛就有現(xiàn)貨 |
詢價(jià) | ||
Mini-circuits |
2324+ |
SMA |
78920 |
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口 |
詢價(jià) | ||
Mini-Circuits |
23+ |
N/A |
10000 |
原裝現(xiàn)貨 假一賠十 |
詢價(jià) | ||
Mini-Circuits |
24+ |
1000 |
優(yōu)勢(shì)貨源原裝正品 |
詢價(jià) |