MTY55N20E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
MTY55N20E |
| 功能描述 | TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM |
| 文件大小 |
231.41 Kbytes |
| 頁(yè)面數(shù)量 |
8 頁(yè) |
| 生產(chǎn)廠商 | Motorola, Inc |
| 企業(yè)簡(jiǎn)稱 |
Motorola【摩托羅拉】 |
| 中文名稱 | 加爾文制造公司官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-3-23 16:00:00 |
| 人工找貨 | MTY55N20E價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
MTY55N20E規(guī)格書(shū)詳情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
3400 |
詢價(jià) | ||||
ON |
23+ |
TO-264 |
6893 |
詢價(jià) | |||
ON/安森美 |
22+ |
TO-3PL |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
ON/安森美 |
22+ |
TO-3PL |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
ST |
22+ |
DO-34 |
16900 |
支持樣品,原裝現(xiàn)貨,提供技術(shù)支持! |
詢價(jià) | ||
DACO |
23+ |
MTY |
15887 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
MTP |
23+ |
TO3PL |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ST |
24+ |
DO-34 |
200000 |
原裝進(jìn)口正口,支持樣品 |
詢價(jià) | ||
MOTOROLA |
23+24 |
TO-3PL |
9860 |
原廠原包裝。終端BOM表可配單。可開(kāi)13%增值稅 |
詢價(jià) | ||
ST(先科) |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) |
